The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Oct. 31, 2015
Applicant:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Inventor:

Nobuyasu Muto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01); H01L 23/52 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 23/04 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0652 (2013.01); H01L 21/6836 (2013.01); H01L 21/78 (2013.01); H01L 23/04 (2013.01); H01L 23/3142 (2013.01); H01L 23/49811 (2013.01); H01L 23/49838 (2013.01); H01L 24/03 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/49 (2013.01); H01L 24/78 (2013.01); H01L 24/83 (2013.01); H01L 24/85 (2013.01); H01L 24/97 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 24/45 (2013.01); H01L 24/73 (2013.01); H01L 2221/68322 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/27436 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/43 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/48471 (2013.01); H01L 2224/48479 (2013.01); H01L 2224/4911 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/49429 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/75743 (2013.01); H01L 2224/78 (2013.01); H01L 2224/78301 (2013.01); H01L 2224/838 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/85001 (2013.01); H01L 2224/85051 (2013.01); H01L 2224/85148 (2013.01); H01L 2224/85205 (2013.01); H01L 2224/85986 (2013.01); H01L 2224/92247 (2013.01); H01L 2224/97 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06562 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/07802 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/181 (2013.01); H01L 2924/1815 (2013.01); H01L 2924/30105 (2013.01);
Abstract

Chip cracking that occurs when a dicing step using a blade is carried out to acquire semiconductor chips with the reduced thickness of a semiconductor wafer is suppressed. When the semiconductor wafer is cut at the dicing step for the semiconductor wafer, a blade is advanced as follows: in dicing in a first direction (Y-direction in FIG.) along a first straight line, the blade is advanced from a first point to a second point. The first point is positioned in a first portion and the second point is opposed to the first point with a second straight line running through the center point of the semiconductor wafer in between.


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