logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9397022 B1

PDFFull Text
Date of Patent:
Jul. 19, 2016

Filed:

Oct. 12, 2015

Semiconductor device having a locally reinforced metallization structure

Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Roman Roth, Sattendorf, AT;

Frank Umbach, München, DE;

Assignee:

Infineon Technologies Austria AG, Villach, AT;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

David Nhu

Int. Cl.
CPC ...
H01L 27/01 (2006.01); H01L 27/12 (2006.01); H01L 31/0392 (2006.01); H01L 23/367 (2006.01); H01L 21/283 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/861 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 23/367 (2013.01); H01L 21/283 (2013.01); H01L 29/0619 (2013.01); H01L 29/404 (2013.01); H01L 29/417 (2013.01); H01L 29/41741 (2013.01); H01L 29/66712 (2013.01); H01L 29/7395 (2013.01); H01L 29/7811 (2013.01); H01L 29/861 (2013.01); H01L 29/8611 (2013.01); H01L 29/4238 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate having a first side, at least a first area formed in the semiconductor substrate, at least a second area formed in the semiconductor substrate, a first metal layer structure having at least a first metal portion in the first area and at least a second metal portion in the second area, and a second metal layer structure on and in ohmic contact with the first metal portion in the first area while leaving the second metal portion of the first metal layer structure in the second area uncovered. The second metal layer structure and the first metal portion of the first metal layer structure form together a common metallization structure on the first side of the semiconductor substrate in the first area.

Find Patent Forward Citations

Loading…