The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Feb. 27, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Suraj K. Patil, Ballston Lake, NY (US);
Min-hwa Chi, Malta, NY (US);
Garo Derderian, Saratoga Springs, NY (US);
Wen-Pin Peng, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 21/263 (2006.01); H01L 21/3065 (2006.01); H01L 21/265 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/0214 (2013.01); H01L 21/02126 (2013.01); H01L 21/02167 (2013.01); H01L 21/2633 (2013.01); H01L 21/26586 (2013.01); H01L 21/28556 (2013.01); H01L 21/3065 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01); H01L 21/76864 (2013.01); H01L 29/4975 (2013.01);
Abstract
A method of forming a metalized contact in MOL is provided. Embodiments include forming a TT through an ILD down to a S/D region; forming a SiOC, SiCN, or SiON layer on side surfaces of the TT; performing a GCIB vertical etching at a 0° angle; implanting Si into the TT by an angled PAI; removing a portion of the TT by Ar sputtering and a remote plasma assisted dry etch process; forming NiSi on the S/D region at the bottom of the TT; and filling the TT with contact metal over the NiSi.