The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Dec. 15, 2013
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Kie-Bong Ku, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G06F 11/20 (2006.01); G11C 29/42 (2006.01); G11C 29/44 (2006.01); G06F 11/10 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G06F 11/2094 (2013.01); G06F 11/1048 (2013.01); G11C 29/42 (2013.01); G11C 29/4401 (2013.01); G11C 29/78 (2013.01); G11C 2029/0409 (2013.01); G11C 2029/4402 (2013.01);
Abstract

A semiconductor memory device includes a memory cell array including a normal region for storing a plurality of data, an error information region for storing a plurality of error information data corresponding to the plurality of normal data, respectively, and a redundancy region for replacing the normal region, an error detection unit suitable for detecting an error on the plurality of data in response to the plurality of error information data, and storing an error location information, which indicates a storage region of a data having an error in the normal and redundancy regions, based on an error detection result, and a repair operation unit suitable for replacing the storage region, which is indicated by the error location information, by the redundancy region during a repair operation period.


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