The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Jan. 14, 2014
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Kimitoshi Sato, Tokyo, JP;
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01L 9/00 (2006.01); H01L 29/84 (2006.01); H01L 27/06 (2006.01); B81C 1/00 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
G01L 9/0073 (2013.01); B81C 1/00246 (2013.01); B81C 1/00952 (2013.01); G01L 9/0042 (2013.01); H01L 27/0617 (2013.01); H01L 29/84 (2013.01); B81B 2201/0264 (2013.01); B81C 2203/0714 (2013.01); B81C 2203/0742 (2013.01); H01L 27/0629 (2013.01); H01L 27/11531 (2013.01);
Abstract
At a pressure sensor region, a pressure sensor including a fixed electrode, a vacuum chamber and a movable electrode is formed at a pressure sensor region, whereas a memory cell transistor and a field effect transistor are formed at a MOS region. An etching hole communicating with the vacuum chamber is sealed by a first sealing film and the like. The vacuum chamber is formed by removing a portion of a film identical to the film of a gate electrode of the memory cell transistor.