The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Oct. 16, 2013
Tsinghua University, Beijing, CN;
Institute of Physics, Chinese Academy of Sciences, Beijing, CN;
Qi-Kun Xue, Beijing, CN;
Ke He, Beijing, CN;
Xu-Cun Ma, Beijing, CN;
Xi Chen, Beijing, CN;
Li-Li Wang, Beijing, CN;
Cui-Zu Chang, Beijing, CN;
Xiao Feng, Beijing, CN;
Yao-Yi Li, Beijing, CN;
Jin-Feng Jia, Beijing, CN;
Tsinghua University, Beijing, CN;
Institute of Physics, Chinese Academy of Sciences, Beijing, CN;
Abstract
A method for forming a topological insulator structure is provided. A strontium titanate substrate having a surface (111) is used. The surface (111) of the strontium titanate substrate is cleaned by heat-treating the strontium titanate substrate in the molecular beam epitaxy chamber. The strontium titanate substrate is heated and Bi beam, Sb beam, Cr beam, and Te beam are formed in the molecular beam epitaxy chamber in a controlled ratio achieved by controlling flow rates of the Bi beam, Sb beam, Cr beam, and Te beam. The magnetically doped topological insulator quantum well film is formed on the surface (111) of the strontium titanate substrate. The amount of the hole type charge carriers introduced by the doping with Cr is substantially equal to the amount of the electron type charge carriers introduced by the doping with Bi.