The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Mar. 24, 2015
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Masaya Nishida, Toyama, JP;

Ryota Sasajima, Toyama, JP;

Seiyo Nakashima, Toyama, JP;

Tomoyasu Miyashita, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); C23C 16/44 (2006.01); H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4409 (2013.01); C23C 16/30 (2013.01); C23C 16/4405 (2013.01); C23C 16/4408 (2013.01); C23C 16/45519 (2013.01); C23C 16/45546 (2013.01); C23C 16/45561 (2013.01); C23C 16/45578 (2013.01); H01L 21/0214 (2013.01); H01L 21/02271 (2013.01);
Abstract

The present invention provides technology capable of suppressing a deposition of by-products in a substrate processing apparatus. When a process gas is supplied into a process vessel, an inert gas having a flow rate controlled by a flow rate controller is supplied to a first and second supply pipes through a third supply pipe, the inert gas of the first supply pipe is ejected into the process vessel by a first ejection part and the inert gas of the second supply pipe is ejected toward an inner wall surface by a second ejection part.


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