The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Jul. 28, 2011
Applicants:

Takuto Yamaguchi, Toride, JP;

Masahide Okamoto, Yokohama, JP;

Osamu Ikeda, Yokohama, JP;

Hiromitsu Kuroda, Hitachi, JP;

Kazuma Kuroki, Hitachinaka, JP;

Shohei Hata, Yokohama, JP;

Yuichi Oda, Hitachi, JP;

Inventors:

Takuto Yamaguchi, Toride, JP;

Masahide Okamoto, Yokohama, JP;

Osamu Ikeda, Yokohama, JP;

Hiromitsu Kuroda, Hitachi, JP;

Kazuma Kuroki, Hitachinaka, JP;

Shohei Hata, Yokohama, JP;

Yuichi Oda, Hitachi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B21B 3/00 (2006.01); B23K 35/00 (2006.01); B23K 35/02 (2006.01); B23K 1/00 (2006.01); B23K 35/28 (2006.01); B23K 35/30 (2006.01); B23K 35/38 (2006.01); B32B 15/01 (2006.01); C22C 5/02 (2006.01); C22C 9/00 (2006.01); C22F 1/00 (2006.01); C22F 1/04 (2006.01); C22F 1/08 (2006.01); C22F 1/16 (2006.01); H01L 21/50 (2006.01); H01L 23/06 (2006.01); H01L 23/10 (2006.01); H01L 23/373 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
B23K 35/0238 (2013.01); B21B 3/00 (2013.01); B23K 1/0016 (2013.01); B23K 35/282 (2013.01); B23K 35/286 (2013.01); B23K 35/302 (2013.01); B23K 35/38 (2013.01); B23K 35/383 (2013.01); B32B 15/017 (2013.01); B32B 15/018 (2013.01); C22C 5/02 (2013.01); C22C 9/00 (2013.01); C22F 1/00 (2013.01); C22F 1/04 (2013.01); C22F 1/08 (2013.01); C22F 1/165 (2013.01); H01L 21/50 (2013.01); H01L 23/06 (2013.01); H01L 23/10 (2013.01); H01L 23/3735 (2013.01); H01L 23/49513 (2013.01); H01L 23/49582 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/743 (2013.01); H01L 24/83 (2013.01); B23K 2201/40 (2013.01); H01L 23/3107 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/2784 (2013.01); H01L 2224/29101 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/838 (2013.01); H01L 2224/8382 (2013.01); H01L 2224/83101 (2013.01); H01L 2924/00011 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/013 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01012 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01025 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/01327 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/16152 (2013.01); H01L 2924/181 (2013.01); Y10T 428/12708 (2015.01); Y10T 428/12736 (2015.01); Y10T 428/12792 (2015.01);
Abstract

The disclosed junction material, manufacturing method thereof, and manufacturing method of junction structure utilize lead-free materials and ensure a high reliability of the junction between a semiconductor element and a frame or substrate, or, between a metal plate and another metal plate. For junctions between a semiconductor element and a frame or substrate, by using as the JUNCTION MATERIAL a laminate material comprising a Zn-based metallic layer (), Al-based metallic layers () on both sides thereof, and X-based metallic layers () (X=Cu, Au, Ag or Sn) on the outside of both the Al-based metallic layers (), even in an oxygen-rich environment, the superficial X-based metallic layers protect the Zn and Al from oxidation until said junction material melts, preserving the wettability and bondability of said junction material as solder and securing the high reliability of the junction.


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