The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2016

Filed:

Sep. 01, 2009
Applicants:

Pascal P Blais, Shefford, CA;

Paul F Fortier, Richelieu, CA;

Kang-wook Lee, Yorktown Heights, NY (US);

Jae-woong Nah, Closter, NJ (US);

Soojae Park, Wappingers Falls, NY (US);

Robert L Toutant, Sainte-Paul, CA;

Alain a Warren, Granby, CA;

Inventors:

Pascal P Blais, Shefford, CA;

Paul F Fortier, Richelieu, CA;

Kang-Wook Lee, Yorktown Heights, NY (US);

Jae-Woong Nah, Closter, NJ (US);

Soojae Park, Wappingers Falls, NY (US);

Robert L Toutant, Sainte-Paul, CA;

Alain A Warren, Granby, CA;

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 20/00 (2006.01); B23K 1/00 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
B23K 1/0016 (2013.01); H01L 21/563 (2013.01); H01L 24/75 (2013.01); H01L 24/81 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/75704 (2013.01); H01L 2224/75985 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/8191 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81815 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01076 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A method and apparatus for making chip assemblies is disclosed that prevent or reduce the cracking and delamination of ultra low-k dielectrics in the back-end-of-line in Si chips that can occur during the chip assembly process. The method and apparatus apply pressure to the top and bottom surfaces of a substrate during the chip bonding process so that the bending and warping of the assembled modules are reduced. The reduced bending and warping prevent or reduce the cracking and delamination of ultra low-k dielectrics.


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