The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Oct. 04, 2014
Applicant:
Renesas Electronics Corporation, Kawasaki-shi, JP;
Inventors:
Assignee:
RENESAS ELECTRONICS CORPORATION, Kawasaki-shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03L 7/00 (2006.01); H03K 17/284 (2006.01); H03K 17/30 (2006.01);
U.S. Cl.
CPC ...
H03K 17/284 (2013.01); H03K 17/302 (2013.01);
Abstract
An NBTI malfunction of a P-channel MOS transistor is prevented. A semiconductor integrated circuit device includes a reset pulse control unit RPC. The reset pulse control unit RPC generates a reset pulse RP for recovery from degradation caused by NBTI of a MOS transistor that receives a negative voltage at the gate of the transistor in a standby status. After the generated reset pulse RP is inputted to the gate of the MOS transistor, an action control signal ACC for activating the MOS transistor is inputted to the gate of the MOS transistor to activate the transistor.