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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9391274 B1

PDFFull Text
Date of Patent:
Jul. 12, 2016

Filed:

Aug. 19, 2015

Nonvolatile memory element and method of manufacturing the same

Applicant:

Canon Anelva Corporation, Kawasaki-shi, JP;

Inventors:

Eun-mi Kim, Kawasaki, JP;

Yuichi Otani, Kawasaki, JP;

Takashi Nakagawa, Kawasaki, JP;

Assignee:

CANON ANELVA CORPORATION, Kawasaki-shi, JP;

Attorney:

Fitzpatrick, Cella, Harper & Scinto

Primary Examiner:

Zandra Smith

Assistant Examiner:

John M Parker

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/16 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/08 (2006.01); C23C 14/35 (2006.01); C23C 14/50 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1625 (2013.01); C23C 14/0042 (2013.01); C23C 14/0641 (2013.01); C23C 14/081 (2013.01); C23C 14/083 (2013.01); C23C 14/35 (2013.01); G11C 13/0007 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01); C23C 14/505 (2013.01); G11C 2213/15 (2013.01); G11C 2213/55 (2013.01);
Abstract

The present invention provides a nonvolatile memory element, in a nonvolatile memory element having a variable resistance layer possessing a stacked structure, in which the variable resistance layer has a high resistance change ratio, and a method of manufacturing the same. The nonvolatile memory element according to one embodiment of the present invention includes a first electrode, a second electrode, and a variable resistance layer which is interposed between the first electrode and second electrode and in which the resistance value changes into at least two different resistance states. The variable resistance layer possesses a stacked structure having a first metal oxide layer containing Hf and O, and a second metal oxide layer that is provided between the first metal oxide layer and at least one of the first electrode and the second electrode and contains Al and O.

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