The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Jun. 04, 2012
Applicant:
Yoshitaka Sasago, Tokyo, JP;
Inventor:
Yoshitaka Sasago, Tokyo, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); H01L 27/2454 (2013.01); H01L 27/2481 (2013.01); H01L 45/122 (2013.01); G11C 13/0069 (2013.01); G11C 2213/71 (2013.01); G11C 2213/75 (2013.01); G11C 2213/78 (2013.01); G11C 2213/79 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01);
Abstract
The purpose of the present invention is to provide a semiconductor storage device, which has small resistance in the ON state, and a small leak current in the OFF state, and which has a small-sized select transistor used therein. In this semiconductor storage device, a channel of a first select transistor that selects a memory cell array is electrically connected to each of the adjacent memory cell arrays (see FIG.).