The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2016

Filed:

Jun. 02, 2015
Applicant:

Everspin Technologies, Inc., Chandler, AZ (US);

Inventors:

Srinivas V. Pietambaram, Gilbert, AZ (US);

Bengt J. Akerman, Sollentuna, SE;

Renu Whig, Chandler, AZ (US);

Jason A. Janesky, Gilbert, AZ (US);

Nicholas D. Rizzo, Gilbert, AZ (US);

Jon M. Slaughter, Tempe, AZ (US);

Assignee:

Everspin Technologies, Inc., Chandler, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01L 27/222 (2013.01);
Abstract

An MRAM bit includes a free magnetic region, a fixed magnetic region comprising an anti-ferromagnetic material, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, wherein the one or more ferromagnetic materials includes cobalt, (ii) a second layer of one or more ferromagnetic materials wherein the one or more ferromagnetic materials includes cobalt, (iii) a third layer of one or more ferromagnetic materials, and an anti-ferromagnetic coupling layer, wherein: (a) the anti-ferromagnetic coupling layer is disposed between the first and third layers, and (b) the second layer is disposed between the first layer and the anti-ferromagnetic coupling layer.


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