logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9391240 B1

PDFFull Text
Date of Patent:
Jul. 12, 2016

Filed:

Sep. 10, 2012

Method for forming transparent electrode and semiconductor device manufactured using same

Applicants:

Tae Geun Kim, Seongnam, KR;

Hee-dong Kim, Seoul, KR;

Inventors:

Tae Geun Kim, Seongnam, KR;

Hee-Dong Kim, Seoul, KR;

Assignee:

KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION, Seoul, KR;

Attorney:

Kile Park Reed & Houtteman PLLC

Primary Examiner:

David S Blum

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/00 (2006.01); H01L 33/42 (2010.01); H01L 29/45 (2006.01); H01L 33/00 (2010.01); H01L 51/44 (2006.01);
U.S. Cl.
CPC ...
H01L 33/42 (2013.01); H01L 29/45 (2013.01); H01L 33/005 (2013.01); H01L 51/442 (2013.01); H01L 51/444 (2013.01); H01L 2933/0016 (2013.01);
Abstract

Provided are a method for forming a transparent electrode and a semiconductor device where the transparent electrode is formed by using the method. The method for forming a transparent electrode includes: forming a transparent electrode by using a transparent material of which resistance state is to be changed from a high resistance state into a low resistance state according to an applied electric field; and performing a forming process of changing the resistance state of the transparent electrode into the low resistance state by applying a voltage to the transparent electrode, so that the transparent electrode has conductivity. Accordingly, it is possible to form the transparent electrode having good ohmic characteristic with respect to the semiconductor layer formed above or below the transparent electrode and high transmittance with respect to the light having a short wavelength in a UV wavelength range as well as the light in visible wavelength range.

Find Patent Forward Citations

Kim, Tae. (2016). Method for forming transparent electrode and semiconductor device manufactured using same (U.S. Patent No. 9391240). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9391240

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…