The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Mar. 03, 2015
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Shinya Boyama, Kiyosu, JP;
Toyoda Gosei Co., Ltd., Kiyosu-shi, Aichi-ken, JP;
Abstract
The present invention provides a Group III nitride semiconductor exhibiting reduced contact resistance. A first p-type contact layer of GaN doped with Mg is formed on a p-type cladding layer, using hydrogen as a carrier gas at a growth temperature of 850° C. to 1,050° C., so as to have a thickness of 10 nm to 300 nm. The Mg concentration is 1×10/cmto 1×10/cm. Subsequently, a second p-type contact layer of GaN doped with Mg is formed, using nitrogen instead of hydrogen as a carrier gas at a temperature of 600° C. to 800° C. so as to have a thickness of two monolayers to 100 Å. The Mg concentration is 2×10/cmto 1×10/cm.