The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Nov. 18, 2011
Applicants:
Dong-sing Wuu, Taichung, TW;
Ray-hua Horng, Taichung, TW;
Wei-ting Lin, Taichung, TW;
Inventors:
Assignee:
NATIONAL CHUNG-HSING UNIVERSITY, Taichung, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/30 (2006.01); H01L 33/20 (2010.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 25/04 (2006.01); C30B 29/60 (2006.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); C30B 25/18 (2013.01); C30B 29/406 (2013.01); C30B 25/04 (2013.01); C30B 29/60 (2013.01); Y10T 428/24479 (2015.01);
Abstract
A patterned substrate for epitaxially growing a semiconductor material includes: a top surface; and a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and is defined by n crystal planes, n being an integer not less than 3. Each of the crystal planes has an upper edge meeting the top surface and is adapted for epitaxially growing the semiconductor material. A maximum distance from one of the upper edges of one of the recesses to an adjacent one of the upper edges of an adjacent one of the recesses is not greater than 500 nm.