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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9391231 B1

PDFFull Text
Expired
Date of Patent:
Jul. 12, 2016

Filed:

Nov. 26, 2013

Method for preparing a thin layer of an absorber made of copper, zinc and tin sulfide(s), annealed thin layer and photovoltaic device thus obtained

Applicant:

Imra Europe Sas, Valbonne, FR;

Inventors:

Alain Jacob, Antibes, FR;

Gerardo Larramona, Valbonne, FR;

Stephane Bourdais, Antibes, FR;

Christophe Chone, La Colle sur Loup, FR;

Yan Cuccaro, Antibes, FR;

Assignee:

IMRA EUROPE SAS, Valbonne, FR;

Attorney:

Ladas & Parry LLP

Primary Examiner:

Robert Vetere

Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/18 (2006.01); H01L 31/0445 (2014.01); H01L 31/0224 (2006.01); H01L 21/02 (2006.01); H01L 31/032 (2006.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1864 (2013.01); H01L 21/02491 (2013.01); H01L 21/02557 (2013.01); H01L 21/02568 (2013.01); H01L 21/02601 (2013.01); H01L 21/02628 (2013.01); H01L 31/022425 (2013.01); H01L 31/022483 (2013.01); H01L 31/0326 (2013.01); H01L 31/03923 (2013.01); H01L 31/0445 (2014.12); Y02E 10/541 (2013.01);
Abstract

The present invention provides a thin compact crystallized layer with large grains of an absorber material essentially consisting of Cu, Zn and Sn sulphide(s), preferably CZTS, with less defects and preferably with improved composition homogeneity and/or reduced content of secondary phases, by producing a method for double annealing, in determined atmospheres, of thin layers of particles of a so-called absorber material based on copper, zinc and tin sulphide, preferably on CZTS, deposited on a substrate covered with molybdenum (Mo), said thin annealed absorber layer deposited on said Mo substrate imparting improved photovoltaic performances to a photovoltaic device which comprises them.

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Jacob, Alain. (2016). Method for preparing a thin layer of an absorber made of copper, zinc and tin sulfide(s), annealed thin layer and photovoltaic device thus obtained (U.S. Patent No. 9391231). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9391231

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