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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9391229 B1

PDFFull Text
Expired
Date of Patent:
Jul. 12, 2016

Filed:

May. 16, 2013

Light receiving element, semiconductor epitaxial wafer, detecting device, and method for manufacturing light receiving element

Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Kohei Miura, Osaka, JP;

Hiroshi Inada, Yokohama, JP;

Yasuhiro Iguchi, Osaka, JP;

Tadashi Saito, Osaka, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Attorneys:

Venable LLP

Michael A. Sartori

Tamatane J. Aga

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Lawrence-Linh T Nguyen

Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 27/146 (2006.01); H01L 21/02 (2006.01); H01L 31/0352 (2006.01); H01L 31/103 (2006.01); H01L 31/105 (2006.01); H01L 27/144 (2006.01); H01L 31/0304 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); B82Y 20/00 (2013.01); H01L 21/02392 (2013.01); H01L 21/02463 (2013.01); H01L 21/02466 (2013.01); H01L 21/02507 (2013.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01); H01L 27/1446 (2013.01); H01L 27/1469 (2013.01); H01L 27/14634 (2013.01); H01L 27/14694 (2013.01); H01L 31/03046 (2013.01); H01L 31/035236 (2013.01); H01L 31/103 (2013.01); H01L 31/105 (2013.01);
Abstract

Provided are a light receiving element etc. which have a high responsivity over the near- to mid-infrared region and stably have a high quality while maintaining the economical efficiency. The light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 μm, a middle layer that is epitaxially grown on the InP substrate, a GaSb buffer layer located in contact with the middle layer, and a light-receiving layer that is epitaxially grown on the GaSb buffer layer and that has a type-II multiple quantum well structure. The GaSb buffer layer is epitaxially grown on the middle layer while exceeding a range of a normal lattice-matching condition.

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