The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2016

Filed:

Feb. 25, 2011
Applicants:

Yasushi Iwata, Tsukuba, JP;

Kanako Tomita, Yokohama, JP;

Inventors:

Yasushi Iwata, Tsukuba, JP;

Kanako Tomita, Yokohama, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0264 (2006.01); H01L 31/18 (2006.01); H01L 31/06 (2012.01); C23C 14/28 (2006.01); H01L 31/028 (2006.01); H01L 31/0352 (2006.01); H01L 31/0392 (2006.01); H01L 31/075 (2012.01); C23C 14/04 (2006.01); C23C 14/22 (2006.01);
U.S. Cl.
CPC ...
H01L 31/06 (2013.01); C23C 14/048 (2013.01); C23C 14/221 (2013.01); C23C 14/228 (2013.01); C23C 14/28 (2013.01); H01L 31/028 (2013.01); H01L 31/03921 (2013.01); H01L 31/035218 (2013.01); H01L 31/075 (2013.01); H01L 31/18 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02E 10/548 (2013.01); Y02P 70/521 (2015.11);
Abstract

Disclosed is a solar battery which: is made from a silicon semiconductor; has a high quantum-conversion efficiency; requires a small number of production steps during manufacturing; and is capable of being recycled in view of environmental load and material recycling. Specifically, a solar battery according to an embodiment of the present invention has a basic structure of a P—Si—N junction in which minute silicon clusters are inserted in a P—N junction, and includes a quantum dot layer having a multiple energy level structure consisting of an energy level of a valence band and an energy level of a conduction band, and intermediate energy levels located between both the bands. The quantum dot layer is composed by periodically arranging silicon quantum dots consisting of silicon clusters with an average particle diameter of 2.5 nm or less and an inter-quantum-dot distance of 1 nm or less.


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