The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Mar. 02, 2015
Applicant:
Nxp B.v., Eindhoven, NL;
Inventors:
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/93 (2006.01); H03B 5/12 (2006.01); H01L 29/66 (2006.01); H01L 27/08 (2006.01); H01L 29/94 (2006.01); H01L 29/423 (2006.01); H01L 23/482 (2006.01);
U.S. Cl.
CPC ...
H01L 29/93 (2013.01); H01L 23/4824 (2013.01); H01L 27/0808 (2013.01); H01L 27/0811 (2013.01); H01L 29/423 (2013.01); H01L 29/66174 (2013.01); H01L 29/94 (2013.01); H03B 5/124 (2013.01); H03B 5/1243 (2013.01);
Abstract
A MOS varactor structure comprising a semiconductor body having a well region and a plurality of gate electrodes and a plurality of cathode electrodes arranged over the well region, wherein the gate electrodes comprise elongate pads, and the plurality of cathode contacts are connected by a cathode connection pattern, the cathode connection pattern comprising a plurality of arms, each of the plurality of arms arranged to extend over a part of a respective gate electrode pad.