The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Sep. 16, 2014
Carolyn Rae Ellinger, Rochester, NY (US);
Shelby Forrester Nelson, Pittsford, NY (US);
Carolyn Rae Ellinger, Rochester, NY (US);
Shelby Forrester Nelson, Pittsford, NY (US);
EASTMAN KODAK COMPANY, Rochester, NY (US);
Abstract
A transistor includes a substrate and a polymer layer that is in contact with the substrate. The polymer layer has a first pattern defining a first area. There is an inorganic semiconductor layer over and in contact with the polymer layer that has a second pattern defining a second area. The first area is located within the second area. There is a source electrode in contact with a first portion of the semiconductor layer and a drain electrode in contact with a second portion of the semiconductor layer, and the source electrode and the drain electrode separated by a gap. A gate insulating layer is in contact with the inorganic semiconductor layer in the gap. There is a gate in contact with the gate insulating layer over the gap.