The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Jun. 19, 2015
Sanken Electric Co., Ltd., Niiza-Shi, Saitama, JP;
Shunsuke Fukunaga, Saitama, JO;
SANKEN ELECTRIC CO., LTD., Niiza-shi, JP;
Abstract
Semiconductor power devices such as vertical FPMOS are described preferably having a plurality of trenches formed at a top portion of a semiconductor substrate extending laterally across the semiconductor substrate along a longitudinal direction. Each trench has sidewalls generally perpendicular to a longitudinal direction of the trench and extending downward from a top surface to a trench bottom. Gate electrodes and source electrodes are positioned in the trenches with controlled spacing between their surfaces to achieve increased capacitance between them at increasing depth from the top surface. This provides higher frequency performance at higher power levels while improving tolerance to higher voltage.