The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
May. 27, 2015
Nxp B.v., Eindhoven, NL;
Godefridus Adrianus Maria Hurkx, Eindhoven, NL;
Jeroen Antoon Croon, Eindhoven, NL;
Johannes Josephus Theodorus Marinus Donkers, Eindhoven, NL;
Stephan Bastiaan Simon Heil, Eindhoven, NL;
Jan Sonsky, Louvain, BE;
NXP B.V., Eindhoven, NL;
Abstract
In an example embodiment, a heterojunction device comprises a substrate, a multilayer structure disposed on the substrate. The multilayer structure has a first layer having a first semiconductor disposed on top of the substrate; a second layer has a second semiconductor is disposed on top of the first layer defining an interface between them. The second semiconductor differs from the first semiconductor such that a 2D Electron Gas forms adjacent to the interface. A first terminal couples to a first area of the interface between the first and second layers and a second terminal couples to a second area of the interface between the first and second layers; an electrically conducting channel comprises a metal or a region of the first layer with a higher defect density than another region of the first layer. The channel connects the second terminal and a region of the first layer such that electric charge can flow between them.