The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Aug. 13, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jae Hoon Lee, Suwon-si, KR;
Chan Ho Park, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/04 (2006.01); H01L 29/267 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/1029 (2013.01); H01L 29/66462 (2013.01); H01L 29/2003 (2013.01);
Abstract
A semiconductor device may include: a first semiconductor layer having a first band gap; a second semiconductor layer including first and second regions separately disposed on an upper surface of the first semiconductor layer and having a second band gap wider than the first band gap; and a third semiconductor layer disposed between the first and second regions of the second semiconductor layer, extending up to at least a portion of the first semiconductor layer. The third semiconductor layer may have a channel region doped with an impurity.