The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Dec. 05, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 29/1033 (2013.01); H01L 29/161 (2013.01); H01L 29/7851 (2013.01); H01L 29/7854 (2013.01);
Abstract
Provided is a method of fabricating a transistor. The method includes forming a fin portion protruding upward from a substrate, forming a device isolation pattern on the substrate to cover a lower portion of a sidewall of the fin portion, forming a trench in the device isolation pattern, the trench exposing a top surface and sidewalls of a channel region of the fin portion, and injecting a Group-IV element into the channel region of the fin portion to increase the volume of the channel region.