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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9391144 B1

PDFFull Text
Date of Patent:
Jul. 12, 2016

Filed:

May. 29, 2015

Selective gallium nitride regrowth on (100) silicon

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Can Bayram, Champaign, NY (US);

Cheng-Wei Cheng, White Plains, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Kuen-Ting Shiu, White Plains, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:

Scully, Scott, Murphy & Presser, P.C.

Primary Examiner:

Evren Seven

Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 23/528 (2006.01); H01L 27/088 (2006.01); H01L 29/205 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 21/02658 (2013.01); H01L 23/528 (2013.01); H01L 27/088 (2013.01); H01L 29/04 (2013.01); H01L 29/045 (2013.01); H01L 29/205 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01);
Abstract

A semiconductor structure including a (100) silicon substrate having a plurality openings located within the silicon substrate, wherein each opening exposes a surface of the silicon substrate having a (111) crystal plane. This structure further includes an epitaxial semiconductor material located on an uppermost surface of the (100) silicon substrate, and a gallium nitride material located adjacent to the surface of the silicon substrate having the (111) crystal plane and adjacent a portion of the epitaxial semiconductor material. The structure also includes at least one semiconductor device located upon and within the gallium nitride material and at least one other semiconductor device located upon and within the epitaxial semiconductor material.

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