The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2016

Filed:

Sep. 23, 2015
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Hsiung-Shih Chang, Taichung, TW;

Jui-Chun Chang, Hsinchu, TW;

Li-Che Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 29/06 (2006.01); H01L 23/48 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/31111 (2013.01); H01L 21/76224 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/481 (2013.01);
Abstract

A top-side contact structure is provided. The top-side contact structure includes a substrate. The substrate includes a first semiconductor layer, an insulating layer on the first semiconductor layer, and a second semiconductor layer on the insulating layer. The top-side contact structure also includes a first trench and a second trench formed in the second semiconductor layer and respectively extending along a first direction and a second direction. The first trench and the second trench connect to each other at an intersection point. The top-side contact structure also includes an insulating material filling the first trench and the second trench. The top-side contact structure also includes a contact plug formed at the intersection point and directly contacting the first semiconductor layer. A method for fabricating a top-side contact structure is also provided.


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