The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Jun. 09, 2015
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
In Su Kim, Cheongju-si, KR;
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Abstract
Provided are a power semiconductor device and method of fabricating the same, in particular a power semiconductor device such as an Insulated Gate Bipolar Transistor (IGBT) including a cell region with a trench structure formed to include a dummy trench and a first trench and a termination region with a termination ring formed surrounding the cell region. Such a power semiconductor device is designed to operable with high power conditions such as when an operating voltage is 600 V, 1200 V and so on.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile