The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Jun. 20, 2014
Applicant:
Globalfoundries, Inc., Grand Cayman, KY;
Inventor:
An Chen, Los Altos, CA (US);
Assignee:
GLOBALFOUNDRIES, INC., Grand Cayman, KW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 5/02 (2006.01); G11C 5/06 (2006.01); H01L 27/24 (2006.01); H01L 27/22 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/224 (2013.01); H01L 27/228 (2013.01); G11C 11/16 (2013.01); G11C 11/1659 (2013.01); G11C 2213/79 (2013.01); H01L 27/2418 (2013.01); H01L 45/04 (2013.01);
Abstract
Embodiments of non-volatile random access memory (RAM) devices and methods of forming the same are provided herein. In an embodiment, a non-volatile RAM device includes a first access transistor that is in electrical communication with a wordline. A first memory element and a first two-terminal selector are serially connected to each other and are in electrical communication with a first bitline and the first access transistor. A second memory element and a second two-terminal selector are serially connected to each other and are in electrical communication with a second bitline and the first access transistor.