The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Dec. 19, 2014
Canon Kabushiki Kaisha, Tokyo, JP;
Mahito Shinohara, Tokyo, JP;
Hideomi Kumano, Tokyo, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A junction type field effect transistor (JFET) in a substrate includes channel and source regions of a first conductivity type and first through fourth gate regions of a second conductivity type. The first and second gate regions are disposed in a direction along a surface of the substrate. The third and fourth gate regions are disposed in the direction. The first and third gate regions are disposed in a depth direction. The first gate region is disposed between the surface and the third gate region. The second and fourth gate regions are disposed in the depth direction. The second gate region is disposed between the surface and the fourth gate region. The channel region includes a first region disposed between the first and third gate regions and a second region disposed between the second and fourth gate regions. The source region is disposed between the first and second gate regions.