The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Jan. 14, 2014
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Shunpei Yamazaki, Tokyo, JP;
Daisuke Matsubayashi, Kanagawa, JP;
Hideomi Suzawa, Kanagawa, JP;
Tetsuhiro Tanaka, Kanagawa, JP;
Hirokazu Watanabe, Kanagawa, JP;
SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Kanagawa-ken, JP;
Abstract
To provide a highly reliable semiconductor device. The semiconductor device includes a first oxide layer over an insulating film; an oxide semiconductor layer over the first oxide layer; a gate insulating film over the oxide semiconductor layer; and a gate electrode over the gate insulating film. The first oxide layer contains indium. The oxide semiconductor layer contains indium and includes a channel formation region. The distance from the interface to the channel formation region is 20 nm or more, preferably 30 nm or more, further preferably 40 nm or more, still further preferably 60 nm or more.