The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Jul. 21, 2015
Samsung Electronics Co., Ltd., Suwon-si, KR;
Wanit Manorotkul, Hwaseong-si, KR;
Joong-han Shin, Yongin-si, KR;
Bong-jin Kuh, Suwon-si, KR;
Han-mei Choi, Seoul, KR;
Dmitry Mikulik, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal. The at least one silicon single crystal includes a flat horizontal portion, which provides an active region of the second level semiconductor device, and a pin-shaped protruding portion protruding from the flat horizontal portion toward the first level semiconductor device.