The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Feb. 26, 2015
Kabushiki Kaisha Toshiba, Tokyo, JP;
Tomoko Matsudai, Shibuya Tokyo, JP;
Tsuneo Ogura, Kamakura Kanagawa, JP;
Bungo Tanaka, Ageo Saitama, JP;
KABUSHIKI KAISHA TOSHIBA, Toyko, JP;
Abstract
A semiconductor device includes first electrode, first semiconductor layer of first conductivity type on the first electrode, second semiconductor layer of second conductivity type on the first semiconductor layer, third semiconductor layer of the first conductivity type on second semiconductor layer, fourth semiconductor layer of the second conductivity type selectively located on the third semiconductor layer, gate electrode through the third and fourth semiconductor layers and into the second semiconductor layer and insulated therefrom, second electrode on the fourth semiconductor layer, fifth semiconductor layer of the second conductivity type between the first electrode and the second semiconductor layer, sixth semiconductor layer of the first conductivity type on the second semiconductor layer contacting the second electrode, and seventh semiconductor layer of the first conductivity type in the second and sixth semiconductor layers, such that the bottom thereof is closer to the first electrode than the bottom of the gate insulating film.