The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2016

Filed:

Oct. 01, 2014
Applicant:

Kec Corporation, Seoul, KR;

Inventors:

Hyun Sik Kim, Gyeongsangbuk-do, KR;

Hee Won Jang, Gyeongsangbuk-do, KR;

Assignee:

KEC Corporation, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 27/0255 (2013.01); H01L 29/861 (2013.01);
Abstract

A transient voltage suppressor and its manufacturing method are provided, which can easily control voltage withstanding characteristics of a Zener diode by analogizing growth of a buried layer by forming a portion of the buried layer by performing ion implantation on a first epitaxial layer and then forming the other portion of the buried layer while depositing a second epitaxial layer having the same impurity concentration with the first epitaxial layer, and which can improve a current distribution characteristic by forming a doping region in a ring shape to increase a current pass region by increasing a PN junction area of a Zener diode in a small area.


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