The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Nov. 13, 2013
Applicants:
Stmicroelectronics S.a., Montrouge, FR;
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Simon Jeannot, Grenoble, FR;
Pascal Tannhof, Montbonnot Saint Martin, FR;
Assignees:
STMICROELECTRONICS S.A., Montrouge, FR;
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 28/60 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method for forming a capacitive structure in a metal level of an interconnection stack including a succession of metal levels and of via levels, including the steps of: forming, in the metal level, at least one conductive track in which a trench is defined; conformally forming an insulating layer on the structure; forming, in the trench, a conductive material; and planarizing the structure.