The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Mar. 09, 2015
Applicant:
Soitec, Crolles, FR;
Inventor:
Mariam Sadaka, Austin, TX (US);
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 23/498 (2006.01); H01L 23/473 (2006.01); B01L 3/00 (2006.01); H01L 21/20 (2006.01); H01L 23/367 (2006.01); H01L 23/46 (2006.01); H01L 27/06 (2006.01); H01L 27/12 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49827 (2013.01); B01L 3/502707 (2013.01); H01L 21/2007 (2013.01); H01L 23/367 (2013.01); H01L 23/46 (2013.01); H01L 23/473 (2013.01); H01L 23/49822 (2013.01); H01L 27/0688 (2013.01); H01L 27/1203 (2013.01); B01L 2300/0864 (2013.01); B01L 2300/0867 (2013.01); B01L 2300/0874 (2013.01); B01L 2300/0887 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13011 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/14051 (2013.01); H01L 2224/14505 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/17519 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81815 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Semiconductor structures are fabricated that include a semiconductor material bonded to a substrate with a layer of dielectric material between the semiconductor material and the substrate. At least one fluidic microchannel extends in a lateral direction through the layer of dielectric material between the semiconductor material and the substrate. The at least one fluidic microchannel includes at least one laterally extending section having a transverse cross-sectional shape entirely surrounded by the layer of dielectric material.