The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Jan. 30, 2015
International Business Machines Corporation, Armonk, NY (US);
Renesas Electronics Corporation, Kanagawa, JP;
Dechao Guo, Niskayuna, NY (US);
Shogo Mochizuki, Clifton Park, NY (US);
Andreas Scholze, Colchester, VT (US);
Chun-Chen Yeh, Clifton Park, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method of forming a semiconductor device that includes forming a fin structure, and forming an undoped epitaxial semiconductor material on the fin structure. A first portion of undoped epitaxial semiconductor material is formed on the sidewall of at least one of a source region portion and a drain region portion of the fin structure. A second portion of the undoped epitaxial semiconductor material is formed on the recessed surface of a bulk semiconductor substrate that is present at the base of the fin structure. The method further includes forming a doped epitaxial semiconductor material on the undoped epitaxial semiconductor material. The undoped epitaxial semiconductor material and the doped epitaxial semiconductor material provide a source region and drain region.