The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Dec. 12, 2014
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Tae Kyung Kim, Chungcheongbuk-do, KR;
Hyun Yul Kwon, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/764 (2006.01); H01L 29/06 (2006.01); H01L 27/115 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/764 (2013.01); H01L 27/11519 (2013.01); H01L 27/11521 (2013.01); H01L 27/11568 (2013.01); H01L 29/0649 (2013.01); H01L 29/423 (2013.01);
Abstract
A semiconductor memory device includes a plurality of auxiliary patterns formed over a semiconductor substrate, a plurality of gate line patterns disposed in parallel with one another over the semiconductor substrate between the plurality of auxiliary patterns, and an air gap formed between the plurality of gate line patterns and between each of the plurality of gate line patterns and each of the auxiliary patterns.