The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2016

Filed:

Sep. 10, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Mong-Sup Lee, Hwaseong-si, KR;

Byoung-Yong Gwak, Suwon-si, KR;

Byung-Ho Kwak, Hwaseong-si, KR;

Yoon-Kyung Kim, Hwaseong-si, KR;

Tae-Joon Park, Hwaseong-si, KR;

Byung-Sul Ryu, Hwaseong-si, KR;

In-Seak Hwang, Suwon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/762 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/762 (2013.01); H01L 27/10855 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01);
Abstract

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a first bit line structure extending in a first direction, a second bit line structure extending in the first direction and spaced apart from the first bit line structure, a storage contact plug located between the first bit line structure and the second bit line structure, and extending in a second direction perpendicular to the first direction, a first plug insulator located between the first bit line structure and the second bit line structure, and configured to contact a side surface extending in the second direction of the storage contact plug, and a plug isolation pattern located between the first bit line structure and the first plug insulator.


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