The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9390924 B1

Date of Patent:

Jul. 12, 2016

Filed:

Nov. 28, 2013

Method for manufacturing sic substrate

Applicant:

Showa Denko K.k., Tokyo, JP;

Inventor:

Yuzo Sasaki, Hikone, JP;

Assignee:

SHOWA DENKO K.K., Tokyo, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Roberts Culbert

Int. Cl.

CPC ...

H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/04 (2006.01); C30B 29/36 (2006.01); H01L 21/3065 (2006.01); C30B 33/00 (2006.01); C30B 33/12 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01);

U.S. Cl.

CPC ...

H01L 21/0475 (2013.01); C30B 29/36 (2013.01); C30B 33/00 (2013.01); C30B 33/12 (2013.01); H01L 21/02019 (2013.01); H01L 21/302 (2013.01); H01L 21/3065 (2013.01); H01L 29/1608 (2013.01);

Abstract

A method for manufacturing a SiC substrate is provided. The method includes: a sacrificial film-forming process of forming a sacrificial film on a surface of a SiC substrate in a film thickness that is equal to or greater than a maximum height difference of the surface; a sacrificial film planarization process of planarizing a surface of the sacrificial film by mechanical processing; and a SiC substrate planarization process of performing dry etching under conditions in which etching selectivity between the SiC substrate and the sacrificial film is in a range of 0.5 to 2.0 so as to remove the sacrificial film and so as to planarize the surface of the SiC substrate.

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