The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Jul. 13, 2015
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Su-A Kim, Seongnam-si, KR;
Dae-Sun Kim, Hwaseong-si, KR;
Dae-Jeong Kim, Seoul, KR;
Sung-Min Ryu, Gimhae-si, KR;
Kwang-Il Park, Yongin-si, KR;
Chul-Woo Park, Yongin-si, KR;
Young-Soo Sohn, Seoul, KR;
Jae-Youn Youn, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A semiconductor memory device includes a memory cell array, sub word-line drivers and power selection switches. The memory cell array includes memory cell rows coupled to word lines. The sub word line drivers are coupled to the word lines. The power selection switches are coupled to the sub word-line drivers. Each power selection switch controls a deactivation voltage level of a first word-line activated from the word-lines and an off-voltage level of a second word line adjacent to the first word line so that the deactivation voltage level and the off-voltage level have at least one of a ground voltage, a first negative voltage and a second negative voltage. The ground voltage, the first negative voltage and the second negative voltage have different voltage levels from each other.