The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2016

Filed:

May. 28, 2014
Applicant:

Uchicago Argonne, Llc, Lemont, IL (US);

Inventors:

Alex B. Martinson, Naperville, IL (US);

Shannon Riha, Park Ridge, IL (US);

Peijun Guo, Evanston, IL (US);

Jonathan D. Emery, Oak Park, IL (US);

Assignee:

UChicago Argonne, LLC, Chicago, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25B 11/04 (2006.01); C25B 1/00 (2006.01); H01G 9/20 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01); C30B 25/18 (2006.01); C30B 25/10 (2006.01); C30B 29/16 (2006.01); C30B 25/06 (2006.01); C30B 25/02 (2006.01);
U.S. Cl.
CPC ...
C25B 11/0452 (2013.01); C23C 16/406 (2013.01); C23C 16/45525 (2013.01); C25B 1/003 (2013.01); C25B 11/0405 (2013.01); H01G 9/2027 (2013.01); C30B 25/02 (2013.01); C30B 25/06 (2013.01); C30B 25/10 (2013.01); C30B 25/183 (2013.01); C30B 29/16 (2013.01); Y02P 20/134 (2015.11); Y02P 20/135 (2015.11);
Abstract

A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (β-FeO) which is deposited at low temperatures to provide 99% phase pure β-FeOthin films on indium tin oxide. Subsequent annealing produces pure α-FeOwith well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.


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