The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Jul. 20, 2012
Stephen Maldonado, Ann Arbor, MI (US);
Azhar Carim, Farmington Hills, MI (US);
Stephen Maldonado, Ann Arbor, MI (US);
Azhar Carim, Farmington Hills, MI (US);
The Regents Of The University Of Michigan, Ann Arbor, MI (US);
Abstract
An electrochemical liquid-liquid-solid (LLS) process that produces unlimited amounts of crystalline semiconductor, such as Ge or Si, from aqueous or polar solutions with tunable nanostructured shapes without any physical or chemical templating agent is presented. Dissolution into, saturation within, and precipitation of the semiconductor from a liquid electrode (e.g., Hg pool) or near an electrode comprising metallic nanoparticles (e.g., In nanoparticles) yields a polycrystalline semiconductor material, as deposited. Such a process can be conducted at conditions, in a single step, and under electrochemical control, while affording control over formation of a variety of material morphologies. Materials formed by such processes are also provided.