The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Jul. 06, 2011
Jan-otto Hoel, Trondheim, NO;
Henning Kjenli, Trondheim, NO;
Harry Morten Rong, Heimdal, NO;
Torbjorn Roe, Trondheim, NO;
Jostein Bjordal, Svelgen, NO;
Jan-Otto Hoel, Trondheim, NO;
Henning Kjenli, Trondheim, NO;
Harry Morten Rong, Heimdal, NO;
Torbjorn Roe, Trondheim, NO;
Jostein Bjordal, Svelgen, NO;
ELKEM AS, Oslo, NO;
Abstract
The present invention relates to a method for the production of trichlorosilane by reaction of silicon with HCI gas at a temperature between 250° and 1100° C., and an absolute pressure of 0.5-30 atm in a fluidized bed reactor, in a stirred bed reactor or a solid bed reactor, where the silicon supplied to the reactor contains between 40 and 10.000 ppm by weight barium and optionally 40-10000 ppm by weight copper The invention further relates to silicon for use in the production of trichlorosilane by reaction of silicon with HCI gas, containing between 40 and 10.000 ppm by weight barium and optionally 40-10000 ppm by weight copper, the remaining except for normal impurities being silicon.