The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
May. 05, 2015
Nxp B.v., Eindhoven, NL;
Godfried Henricus Josephus Notermans, Hamburg, DE;
Hans-Martin Ritter, Hamburg, DE;
NXP B.V., Eindhoven, NL;
Abstract
A semiconductor device () comprising: a substrate () having a first surface (); an n-type well () extending from the first surface () into the substrate () and configured to form a depletion region () in the substrate () around the n-type well (); an insulating layer () extending over the first surface () of the substrate () from the n-type well (), the insulating layer () configured to form an inversion layer () in the substrate () extending from the n-type well () adjacent to the first surface (); wherein a p-type floating channel stopper () is provided, configured to extend through the inversion layer () to reduce electrical coupling between the n-type well () and at least part of the inversion layer (), and is electrically disconnected from a remainder of the substrate () outside of the depletion region ().