The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Aug. 24, 2006
Takahiko Maeda, Hino, JP;
Haruo Kawakami, Miura, JP;
Hisato Kato, Hachioji, JP;
Nobuyuki Sekine, Hachioji, JP;
Kyoko Kato, Zushi, JP;
Takahiko Maeda, Hino, JP;
Haruo Kawakami, Miura, JP;
Hisato Kato, Hachioji, JP;
Nobuyuki Sekine, Hachioji, JP;
Kyoko Kato, Zushi, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;
Abstract
A process for producing a thin film field-effect transistor includes providing a gate electrode, a gate insulating film, and source and drain electrodes, treating entire surfaces of the source and drain electrodes with a mixture of sulfuric acid and hydrogen peroxide, and providing an organic electronic material layer containing an organic electronic material on the gate insulating film to be in electrical contact with the source and drain electrodes. A reaction product of the organic electronic material, sulfuric acid and hydrogen peroxide containing a sulfonated product of the organic electronic material is present only at an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer to thereby increase the electroconductivity of the organic electronic material and reduce a charge injection barrier from the source electrode to the organic electronic material.