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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9385304 B1

PDFFull Text
Date of Patent:
Jul. 05, 2016

Filed:

Mar. 10, 2014

Magnetic memory and method of manufacturing the same

Applicants:

Masahiko Nakayama, Seoul, KR;

Tadashi Kai, Seoul, KR;

Masaru Toko, Seoul, KR;

Hiroaki Yoda, Seoul, KR;

Hyung Suk Lee, Icheon-si, KR;

Jae Geun OH, Icheon-si, KR;

Choon Kun Ryu, Seoul, KR;

Min Suk Lee, Seongnam-si, KR;

Inventors:

Masahiko Nakayama, Seoul, KR;

Tadashi Kai, Seoul, KR;

Masaru Toko, Seoul, KR;

Hiroaki Yoda, Seoul, KR;

Hyung Suk Lee, Icheon-si, KR;

Jae Geun Oh, Icheon-si, KR;

Choon Kun Ryu, Seoul, KR;

Min Suk Lee, Seongnam-si, KR;

Assignees:

KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;

SK HYNIX INC., Icheon-si, Gyeonggi-do, KR;

Attorney:

Holtz, Holtz & Volek PC

Primary Examiner:

Ngan Ngo

Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 45/00 (2006.01); G11C 11/56 (2006.01); G11C 11/15 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/15 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); G11C 11/5607 (2013.01); H01L 27/222 (2013.01); H01L 27/228 (2013.01); H01L 27/2463 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); H01L 45/04 (2013.01);
Abstract

According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metal material, a stacked body above the conductive layer, and including a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer between the first magnetization film and the second magnetization film, and an insulating layer on a side face of the stacked body, and containing an oxide of the first metal material. The first magnetization film and/or the second magnetization film includes a first region positioned in a central portion, and a second region positioned in an edge portion and containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, Cl, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti.

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