The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
May. 19, 2015
The United States of America As Represented BY the Secretary of the Navy, Washington, DC (US);
Osama Nayfeh, San Diego, CA (US);
Anna Leese De Escobar, San Diego, CA (US);
Kenneth Simonsen, San Diego, CA (US);
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY, Washington, DC (US);
Abstract
A system and method involve generating an electric field across a superconductor device having an ionic layer disposed between and separated from first and second superconductor layers by respective first and second barrier layers. The electric field may be generated by applying an input signal, such as a voltage, to the superconductor device while the device is in a superconducting state. The voltage may be below a threshold voltage for inducing ion transport within the ionic layer or may be above or below a threshold voltage for inducing ion transport from the ionic layer across an ionic layer/barrier layer interface. The ion transport may tune the potential profile and/or modulate the critical current of the superconductor device and may include quantum coherent ionic transport, Josephson tunneling, or resonant tunneling. The electric field generated across the superconductor device may alter the spin-states of the ions within the ionic layer.