The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Jun. 29, 2015
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Shingo Totani, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
The Group III nitride semiconductor light-emitting device has an insulating multilayer film intervening between a second semiconductor layer and a transparent electrode. The insulating multilayer film serves as a distributed Bragg reflector and is formed in a region including a projection area obtained by projecting a p-electrode to the p-type contact layer. The insulating multilayer film has a first region and a second region, wherein the first region has a layer thickness greater than 95% of the maximum film thickness of the insulating multilayer film, and the second region has a layer thickness not greater than 95% of the maximum film thickness of the insulating multilayer film. The second surface of the insulating multilayer film in the second region has a slope having a dent portion denting toward the first surface of the insulating film.