logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9385251 B1

PDFFull Text
Date of Patent:
Jul. 05, 2016

Filed:

Jul. 09, 2013

Flexible semiconductor devices and methods of manufacturing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jun-hee Choi, Seongnam-si, KR;

Byoung-lyong Choi, Seoul, KR;

Tae-ho Kim, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Jami M Valentine

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 31/0304 (2006.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 31/18 (2006.01); H01L 31/0352 (2006.01); B82Y 20/00 (2011.01); H01L 31/047 (2014.01); H01L 25/075 (2006.01); H01L 33/24 (2010.01); H01L 33/56 (2010.01);
U.S. Cl.
CPC ...
H01L 31/03044 (2013.01); B82Y 20/00 (2013.01); H01L 31/03529 (2013.01); H01L 31/035218 (2013.01); H01L 31/035236 (2013.01); H01L 31/047 (2014.12); H01L 31/1848 (2013.01); H01L 31/1856 (2013.01); H01L 31/1892 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01); H01L 25/0753 (2013.01); H01L 33/0079 (2013.01); H01L 33/24 (2013.01); H01L 33/56 (2013.01); H01L 2924/0002 (2013.01); Y02E 10/544 (2013.01); Y02P 70/521 (2015.11);
Abstract

A flexible semiconductor device and a method of manufacturing the flexible semiconductor device are provided. The flexible semiconductor device may include at least one vertical semiconductor element that is at least partly embedded in a flexible material layer. The flexible semiconductor device may further include a first electrode formed on a first surface of the flexible material layer and a second electrode formed on a second surface of the flexible material layer. A method of manufacturing a flexible semiconductor device may include separating a flexible material layer, in which the at least one vertical semiconductor element is embedded, from a substrate by weakening or degrading an adhesive force between an underlayer and a buffer layer by using a difference in coefficients of thermal expansion of the underlayer and the buffer layer.

Find Patent Forward Citations

Loading…